AFP9575S Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFP9575S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) 60V P-Channel Enhancement Mode MOSFET Features -60V/-18A,RDS(ON)= 68mΩ@VGS= -10V -60V/-12A,RDS(ON)= 78mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1...