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A4900 - High Voltage Three Phase Gate Driver

General Description

The A4900 is a high-voltage, high-speed, power IGBT or MOSFET driver providing three independent half-bridge channels for three-phase applications.

A bootstrap capacitor is used to provide the above battery supply voltage required for N-channel MOSFETs or IGBTs used as high current switches.

Key Features

  • High voltage 3-phase gate drive.
  • Floating high-side gate drive to 550 VDC supply.
  • Tolerant to high voltage slew rates.
  • Cross-conduction protection with fixed dead time.
  • 15 V gate drive supply voltage.
  • TTL compatible logic inputs.
  • Undervoltage detection.
  • Overcurrent detection with integrated fault blanking.
  • Overtemperature shutdown.
  • Matched propagation delays.
  • Detailed fault reporting Package: 44-p.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A4900 High Voltage Three Phase Gate Driver Features and Benefits • High voltage 3-phase gate drive • Floating high-side gate drive to 550 VDC supply • Tolerant to high voltage slew rates • Cross-conduction protection with fixed dead time • 15 V gate drive supply voltage • TTL compatible logic inputs • Undervoltage detection • Overcurrent detection with integrated fault blanking • Overtemperature shutdown • Matched propagation delays • Detailed fault reporting Package: 44-pin QSOP (suffix LQ) Description The A4900 is a high-voltage, high-speed, power IGBT or MOSFET driver providing three independent half-bridge channels for three-phase applications.