AHV85110 Overview
Key Specifications
Description
The AHV85110 isolated gate driver is optimized for driving GaN FETs in multiple applications and topologies. An isolated output bias supply is integrated into the driver, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap.
Key Features
- Transformer Isolation barrier
- Power-Thru integrated isolated bias □ No need for high-side bootstrap □ No need for external secondary-side bias
- AEC-Q100 Grade 2 qualification
- 50 ns propagation delay
- Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
- Supply voltage 10.5 V < VDRV < 13.2 V
- Undervoltage lockout on primary VDRV and secondary VSEC
- Enable pin with fast response
- Continuous ON capability-no need to recycle IN or recharge bootstrap capacitor
- CMTI > 100 V/ns dv/dt immunity
