AHV85111 Overview
Key Specifications
Description
The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications and topologies. An isolated dual positive/negative output bias supply is integrated into the driver, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap.
Key Features
- Transformer isolation barrier
- Power-Thru integrated isolated bias □ No need for high-side bootstrap □ No need for external secondary-side bias
- AEC-Q100 Grade 2 qualification
- Bipolar drive output with adjustable regulated positive rail
- Built-in primary-side 3.3 V REF bias output
- 50 ns propagation delay
- Supply voltage 10.8 V < VDRV < 13.2 V
- Undervoltage lockout on primary VDRV and secondary VSEC
- Enable pin with fast response
- Continuous ON capability-no need to recycle IN or recharge bootstrap capacitor
