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AS7C1025B - 5V 128K x 8 CMOS SRAM

General Description

The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits.

They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

Key Features

  • Industrial and commercial temperatures.
  • Organization: 131,072 x 8 bits.
  • High speed - 10/12/15/20 ns address access time - 5/6/7/8 ns output enable access time.
  • Low power consumption: ACTIVE - 605mW / max @ 10 ns.
  • Low power consumption:.

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Datasheet Details

Part number AS7C1025B
Manufacturer Alliance Semiconductor Corporation
File Size 132.20 KB
Description 5V 128K x 8 CMOS SRAM
Datasheet download datasheet AS7C1025B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
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AS7C1026 5V/3.3V 64K x 16 CMOS SRAM Alliance Semiconductor
AS7C1026B 5V 64K x 16 CMOS SRAM Alliance Semiconductor

Other Datasheets by Alliance Semiconductor Corporation

Part Number Description
AS7C1025A 5V/3.3V 128K x 8 CMOS SRAM
AS7C1024B 5V 1Mb FAST Asynchronous SRAM
AS7C1026A 5V/3.3V 64K X 16 CMOS SRAM
AS7C251MFT18A 2.5V 1M x 18 flowthrough burst synchronous SRAM
AS7C251MFT32A (AS7C251MFT32A / AS7C251MFT36A) 2.5V 1M x 32/36 Flow-through synchronous SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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March 2004 ® AS7C1025B www.DataSheet4U.com 5V 128K X 8 CMOS SRAM (Center power and ground) Features • Industrial and commercial temperatures • Organization: 131,072 x 8 bits • High speed - 10/12/15/20 ns address access time - 5/6/7/8 ns output enable access time • Low power consumption: ACTIVE - 605mW / max @ 10 ns • Low power consumption: STANDBY - 55 mW / max CMOS • 6 T 0.