AS7C1025B Datasheet | Alliance Semiconductor Corporation

March 2004 ® .. 5V 128K X 8 CMOS SRAM (Center power and ground) Features - Industrial and mercial temperatures - Organization: 131,072 x 8 bits - High speed - 10/12/15/20 ns address access time - 5/6/7/8 ns output enable access time - Low power consumption: ACTIVE - 605mW / max @ 10 ns - Low power consumption: STANDBY - 55 mW / max CMOS - 6 T 0.18 u CMOS technology - Easy memory expansion with CE, OE inputs - Center power and ground - TTL/LVTTL-patible, three-state I/O - JEDEC-standard packages - 32-pin, 300 mil SOJ - 32-pin, 400 mil SOJ - ESD protection ≥ 2000 volts - Latch-up current ≥ 200 mA Pin arrangement Logic block diagram 32-pin SOJ (300 mil)...