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AS4C128M16D3LB-12BIN

AS4C128M16D3LB-12BIN is 2G DDR3L manufactured by Alliance Semiconductor.
AS4C128M16D3LB-12BIN datasheet preview

AS4C128M16D3LB-12BIN Datasheet

Part number AS4C128M16D3LB-12BIN
Download AS4C128M16D3LB-12BIN Datasheet (PDF)
File Size 1.96 MB
Manufacturer Alliance Semiconductor
Description 2G DDR3L
AS4C128M16D3LB-12BIN page 2 AS4C128M16D3LB-12BIN page 3

Related Alliance Semiconductor Datasheets

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AS4C128M16D3LB-12BCN Double-data-rate architecture
AS4C128M16D3LA-12BIN 128M x 16 bit DDR3L Synchronous DRAM
AS4C128M16D3LC-12BCN 128M x 16 bit DDR3L Synchronous DRAM
AS4C128M16D3LC-12BIN 128M x 16 bit DDR3L Synchronous DRAM
AS4C128M16D3A-12BIN 2Gb Double-Data-Rate-3 DRAM

AS4C128M16D3LB-12BIN Description

2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 620-9211 Alliance Memory Inc.

AS4C128M16D3LB-12BIN Key Features

  • JEDEC Standard pliant
  • Power supplies: VDD & VDDQ = +1.35V (1.283V ~ 1.45V)
  • Backward patible to VDD & VDDQ = +1.5V ±0.075V
  • Operating temperature: TC = -40~95°C (Industrial)
  • Supports JEDEC clock jitter specification
  • Fully synchronous operation
  • Fast clock rate: 800MHz
  • Differential Clock, CK & CK#
  • Bidirectional differential data strobe
  • DQS & DQS#

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