Alliance Semiconductor AS4C16M16D1A
16M x 16 DDR1
FEATURES
● Fast clock rate: 200MHz● Differential Clock CK & CK
● Bi-directional DQS
● DLL enable/disable by EMRS
● Fully synchronous operation
● Internal pipeline architecture
● Four internal banks, 4M x 16-bit for each bank
● Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved
● Individual byte write mask control
● DM Write Latency = 0
● Auto Refresh and Self Refresh
● 8192 refresh cycles / 64ms
● Precharge & active power down
● Power supplies: VDD & VDDQ = 2.5V ± 0.2V
● Interf