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AS4C16M16D1 - 16M x 16 bit DDR Synchronous DRAM

General Description

Table 2.

Differential Clock: CK, CK are driven by the system clock.

Key Features

  • Fast clock rate: 200MHz.
  • Differential Clock CK & CK.
  • Bi-directional DQS.
  • DLL enable/disable by EMRS.
  • Fully synchronous operation.
  • Internal pipeline architecture.
  • Four internal banks, 4M x 16-bit for each bank.
  • Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
  • Individual byte-write mask control.
  • DM Write Latency = 0.
  • Auto Refresh and Self Refresh.
  • 8192.

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Datasheet Details

Part number AS4C16M16D1
Manufacturer Alliance Semiconductor
File Size 1.44 MB
Description 16M x 16 bit DDR Synchronous DRAM
Datasheet download datasheet AS4C16M16D1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AS4C16M16D1 16M x 16 bit DDR Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.1, Sep. /2011) Features  Fast clock rate: 200MHz  Differential Clock CK & CK  Bi-directional DQS  DLL enable/disable by EMRS  Fully synchronous operation  Internal pipeline architecture  Four internal banks, 4M x 16-bit for each bank  Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved  Individual byte-write mask control  DM Write Latency = 0  Auto Refresh and Self Refresh  8192 refresh cycles / 64ms  Operating temperature range - Commercial (0 ~ 70°C) - Industrial (-40 ~ 85°C)  Precharge & active power down  Power supplies: VDD & VDDQ = 2.5V  0.