Datasheet4U Logo Datasheet4U.com

AS4C1G8D3LA - 8Gbit DDR3L SDRAM

Description

Clock : CK and CK are differential clock inputs.

Features

  • - Double-data-rate architecture; two data transfers per clock cycle - The high-speed data transfer is realized by the 8 bits prefetch pipe- lined architecture - Bi-directional differential data strobe (DQS and DQS) is transmitted/ received with data for capturing data at the receiver - DQS is edge-aligned with data for READs; center-aligned with data for WRITEs - Differential clock inputs (CK and CK) - DLL aligns DQ and DQS transitions with CK transitions - Commands entered on each positive CK e.

📥 Download Datasheet

Datasheet preview – AS4C1G8D3LA

Datasheet Details

Part number AS4C1G8D3LA
Manufacturer Alliance Semiconductor
File Size 2.14 MB
Description 8Gbit DDR3L SDRAM
Datasheet download datasheet AS4C1G8D3LA Datasheet
Additional preview pages of the AS4C1G8D3LA datasheet.
Other Datasheets by Alliance Semiconductor

Full PDF Text Transcription

Click to expand full text
Revision History 8Gbit DDR3L SDRAM 8 BANKS X 128Mbit X 8 - Dual Die Package (DDP) 78ball FBGA Package Revision Details Rev 1.0 Preliminary datasheet AS4C1G8D3LA Date Feb. 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 41 - Rev.1.0. Feb.2019 AS4C1G8D3LA Specifications - Density : 8G bits - Organization : - 128M words x 8 bits x 8 banks - Package : - 78-ball FBGA - Two 1Gbit x 4 dies stacked (DDP) - Lead-free (RoHS compliant) and Halogen-free - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) - -Backward compatible to VDD, VDDQ = 1.5V ± 0.
Published: |