Download the AS4C1GM8D3L datasheet PDF.
This datasheet also covers the AS4C2GM4D3L variant, as both devices belong to the same ddr3l sdram family and are provided as variant models within a single manufacturer datasheet.
General Description
Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L
256 Meg x 4 x 8 banks
AS4C1G8MD3L
128 Meg x 8 x 8 banks AS4C512M16D3L
Preliminary datasheet Amend Table 1 noted.
not released yet
Date February
Key Features
VDD = VDDQ = 1.35V (1.283.
1.45V).
Backward compatible to VDD = VDDQ = 1.5V ±0.075V.
Supports DDR3L devices to be backward compatible in 1.5V.
Note: The manufacturer provides a single datasheet file (AS4C2GM4D3L-AllianceSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AS4C1GM8D3L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AS4C1GM8D3L. For precise diagrams, and layout, please refer to the original PDF.
8Gb: x4, x8, x16 DDR3L SDRAM Description Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L– 256 Meg x 4 x 8 banks* AS4C1G8MD3L– 128 Meg x 8 x 8 banks AS4C512M16D3...
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256 Meg x 4 x 8 banks* AS4C1G8MD3L– 128 Meg x 8 x 8 banks AS4C512M16D3L – 64 Meg x 16 x 8 banks Revision Rev 1.0 Rev 2.0 Details Preliminary datasheet Amend Table 1 noted. * not released yet Date February 2016 June 2016 Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 0 8Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM AS4C2GM4D3L– 256 Meg x 4 x 8 banks* AS4C1G8MD3L– 128 Meg x 8 x 8 banks AS4C512M16D3L – 64 Meg x 16 x 8 banks Features • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward c
AS4C1GM8D3L Datasheet
