AS4C512M16D3L Key Features
- VDD = VDDQ = 1.35V (1.283-1.45V)
- Backward patible to VDD = VDDQ = 1.5V ±0.075V
- Supports DDR3L devices to be backward patible in 1.5V
- Part: AS4C512M16D3L
- Manufacturer: Alliance Semiconductor
- Size: 4.24 MB
Related Alliance Semiconductor Datasheets
| Part Number | Description |
|---|---|
| AS4C512M16D3LA | 8Gbit DDR3L SDRAM |
| AS4C512M16D3LB | 8Gbit DDR3L |
| AS4C512M8D3L | 4Gb DDR3L |
| AS4C512M8D4A | 512M x 8 bit DDR4 Synchronous DRAM |
| AS4C128M16D2A-25BCN | 2Gb DDR2 |
AS4C512M16D3L Description
not released yet Date February 2016 June 2016 Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 620-9211 Alliance Memory Inc.