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AS6C2008A - 256K X 8 BIT LOW POWER CMOS SRAM

General Description

The AS6C2008A is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Key Features

  • Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP. ) Standby current : 2µA (TYP. ) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN. ) Lead free and green package available Package : 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 32-pin 450 mil SOP 32-pin 600 mil P-DIP 36-ball 6mm x 8mm TFBGA.

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Datasheet Details

Part number AS6C2008A
Manufacturer Alliance Semiconductor
File Size 1.11 MB
Description 256K X 8 BIT LOW POWER CMOS SRAM
Datasheet download datasheet AS6C2008A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUGUST 2007 January 2007 AS6C2008A 512K X8 BIT SRAM LOW POWER CMOS SRAM 256K X 8 BIT LOW POWER CMOS FEATURES Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Lead free and green package available Package : 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 32-pin 450 mil SOP 32-pin 600 mil P-DIP 36-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C2008A is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.