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AS6C2016 - 128K X 16 BIT LOW POWER CMOS SRAM

Datasheet Summary

Description

The AS6C2016 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Features

  • Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP. ) Standby current : 2µA (TYP. ) Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN. ) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA.

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Datasheet Details

Part number AS6C2016
Manufacturer Alliance Semiconductor
File Size 481.67 KB
Description 128K X 16 BIT LOW POWER CMOS SRAM
Datasheet download datasheet AS6C2016 Datasheet
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FEBRUARY 2008 January 2007 AS6C2016 512K X 8CMOS BIT LOW 128K X 16 BIT LOW POWER SRAMPOWER CMOS SRAM FEATURES Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C2016 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology.
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