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AS6C6264A Datasheet 8k X 8 Bit Low Power CMOS Sram

Manufacturer: Alliance Semiconductor

Overview:   MARCH 2009  AS6C6264A    8K X 8 BIT LOW POWER CMOS SRAM.

General Description

  The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6transistor cell.

The circuit is activated by the rising edge of E2 (at E1 = L), or the falling edge of E1 (at E2 = H).

The address and control inputs open simultaneously.

Key Features

  • 8192 x 8 bit static CMOS RAM 70 ns Access Times Common data inputs and outputs Three-state outputs Typ. operating supply current o 70 ns: 10 mA Standby current: o < 2 μA at Ta ≤ 70 °C Data retention current at 2 V: o < 1 μA at Ta ≤ 70 °C TTL/CMOS-compatible Automatic reduction of power dissipation in long Read or Write cycles Power supply voltage 5 V Operating temperature ranges: o 0 to 70 °C o -40 to 85 °C ESD protection > 2000.

More Datasheets from Alliance Semiconductor

Part Number Description
AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM
AS6C62256 32K X 8 BIT LOW POWER CMOS SRAM
AS6C62256A 32K x 8 BIT LOW POWER CMOS SRAM
AS6C6416-55BIN 4M x 16 bit Low Power CMOS SRAM
AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM
AS6C1008L 128k x 8 BIT SUPER LOW POWER CMOS SRAM
AS6C1016 64K X 16 BIT LOW POWER CMOS SRAM
AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM
AS6C1616A 1024K X 16 BIT LOW POWER CMOS SRAM
AS6C2008 256K x 8 BIT LOW POWER CMOS SRAM

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