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AS6C6264A - 8K x 8 BIT LOW POWER CMOS SRAM

General Description

The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6transistor cell.

Key Features

  • 8192 x 8 bit static CMOS RAM 70 ns Access Times Common data inputs and outputs Three-state outputs Typ. operating supply current o 70 ns: 10 mA Standby current: o < 2 μA at Ta ≤ 70 °C Data retention current at 2 V: o < 1 μA at Ta ≤ 70 °C TTL/CMOS-compatible Automatic reduction of power dissipation in long Read or Write cycles Power supply voltage 5 V Operating temperature ranges: o 0 to 70 °C o -40 to 85 °C ESD protection > 2000.

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Datasheet Details

Part number AS6C6264A
Manufacturer Alliance Semiconductor
File Size 882.49 KB
Description 8K x 8 BIT LOW POWER CMOS SRAM
Datasheet download datasheet AS6C6264A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  MARCH 2009  AS6C6264A    8K X 8 BIT LOW POWER CMOS SRAM FEATURES             8192 x 8 bit static CMOS RAM 70 ns Access Times Common data inputs and outputs Three-state outputs Typ. operating supply current o 70 ns: 10 mA Standby current: o < 2 μA at Ta ≤ 70 °C Data retention current at 2 V: o < 1 μA at Ta ≤ 70 °C TTL/CMOS-compatible Automatic reduction of power dissipation in long Read or Write cycles Power supply voltage 5 V Operating temperature ranges: o 0 to 70 °C o -40 to 85 °C ESD protection > 2000 V (MIL STD 883C M3015.