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AS6C8016 - 512K X 16 BIT SUPER LOW POWER CMOS SRAM

General Description

The AS6C8016 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Key Features

  • Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP. ) Standby current : 6µA (TYP. ) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN. ) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA.

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Datasheet Details

Part number AS6C8016
Manufacturer Alliance Semiconductor
File Size 724.54 KB
Description 512K X 16 BIT SUPER LOW POWER CMOS SRAM
Datasheet download datasheet AS6C8016 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NOVEMBER 2007 January 2007 AS6C8016 X 8 BITCMOS LOW SRAM POWER CMOS SRAM 512K X 16 BIT SUPER 512K LOW POWER FEATURES Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 6µA (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C8016 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology.