Datasheet Details
| Part number | AO3401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 316.80 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3401_AlphaOmegaSemiconductors.pdf |
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Overview: AO3401 30V P-Channel MOSFET General.
| Part number | AO3401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 316.80 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3401_AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS=-2.5V) -30V -4.0A < 50mW < 60mW < 85mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum -30 ±12 -4 -3.2 -27 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 6.1: February 2024 www.aosmd.com Page 1 of 5 AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -0.5 ID(ON) On state drain current VGS=-10V, VDS=5V -27 VGS=-10V, ID=-4.0A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3.7A VGS=-2.5V, ID=-2A gFS Forward Transconductance VDS=-5V, ID=-4.0A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Pulsed Body-Diode CurrentB V -1 mA -5 ±100 nA -0.9 -1.3 V A 41 50 mW 62 75 47 60 mW 60 85 mW 17 S -0.7 -1 V -2 A -27 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3401 | P-Channel MOSFET | VBsemi |
 |
AO3401 | P-Channel MOSFET | Kexin |
 |
AO3401 | P-Channel Enhancement-Mode MOSFETs | HAOHAI |
|
AO3401A | P-Channel MOSFET | Kexin |
|
AO3401A | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3403 | 30V P-Channel MOSFET |
| AO3404 | N-Channel MOSFET |
| AO3404A | N-Channel MOSFET |
| AO3405 | P-Channel MOSFET |