Datasheet Details
| Part number | AO3407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 312.88 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3407-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AO3407 30V P-Channel MOSFET General.
| Part number | AO3407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 312.88 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO3407-AlphaOmegaSemiconductors.pdf |
|
|
|
The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -4.1A < 52mW < 87mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum -30 ±20 -4.1 -3.5 -25 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 5.1: July 2023 www.aosmd.com Page 1 of 5 AO3407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -25 VGS=-10V, ID=-4.1A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3A gFS Forward Transconductance VDS=-5V, ID=-4.1A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current V -1 mA -5 ±100 nA -1.9 -2.4 V A 34 52 mW 52 73 54 87 mW 10 S -0.7 -1 V -2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 520 pF 100 pF 65 pF 3.5 7.5 11.5 W
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3407 | P-Channel MOSFET | Kexin |
 |
AO3407 | P-Channel MOSFET | VBsemi |
|
AO3407A | P-Channel MOSFET | VBsemi |
|
AO3407A | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO3407A | 30V P-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3403 | 30V P-Channel MOSFET |
| AO3404 | N-Channel MOSFET |