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AO3422 - N-Channel MOSFET

General Description

The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It offers operation over a wide gate drive range from 2.5V to 12V.

This device is suitable for use as a load switch.

Key Features

  • VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mW (VGS = 4.5V) RDS(ON) < 200mW (VGS = 2.5V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 55 ±12 2.1 1.7 10 1.25 0.8 -55 to 150 Thermal.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Features VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mW (VGS = 4.5V) RDS(ON) < 200mW (VGS = 2.5V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 55 ±12 2.1 1.7 10 1.25 0.