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AO3424 - 30V N-Channel MOSFET

Datasheet Summary

Description

The AO3424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number AO3424
Manufacturer Alpha & Omega Semiconductors
File Size 307.72 KB
Description 30V N-Channel MOSFET
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AO3424 30V N-Channel MOSFET General Description Product Summary The AO3424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 3.8A < 55mW < 65mW < 85mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 3.8 3.1 15 1.4 0.
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