Datasheet Details
| Part number | AO4292E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.58 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AO4292E-AlphaOmegaSemiconductors.pdf |
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Overview: AO4292E 100V N-Channel MOSFET General.
| Part number | AO4292E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.58 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AO4292E-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • ESD protected • RoHS and Halogen-Free Compliant Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 100V 8A < 23mΩ < 33mΩ HBM Class 2 Top View D D D D SOIC-8 Bottom View G S S S Orderable Part Number AO4292E Package Type SO-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10μs TA=25°C TA=70°C VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL D G S Form Tape & Reel Minimum Order Quantity 3000 Maximum 100 ±20 8 6.2 32 14 10 120 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Typ Max Units 31 40 °C/W 59 75 °C/W 16 24 °C/W Rev.1.1: August 2023 www.aosmd.com Page 1 of 5 AO4292E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.6 VGS=10V, ID=8A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Cap
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4292 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
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