Datasheet4U Logo Datasheet4U.com

AO4456 - N-Channel MOSFET

Datasheet Summary

Description

The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is www.DataSheet4U.com suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Features

  • VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C ID.

📥 Download Datasheet

Datasheet preview – AO4456

Datasheet Details

Part number AO4456
Manufacturer Alpha & Omega Semiconductors
File Size 177.50 KB
Description N-Channel MOSFET
Datasheet download datasheet AO4456 Datasheet
Additional preview pages of the AO4456 datasheet.

📁 Similar Datasheet

  • AO4456 - N-Channel 30-V (D-S) MOSFET (Freescale)
  • AO4450 - 40V N-Channel MOSFET (Freescale)
  • AO4452 - 100V N-Channel MOSFET (Freescale)
  • AO4454 - 100V N-Channel MOSFET (Freescale)
  • AO4458 - N-Channel 30-V (D-S) MOSFET (Freescale)
  • AO4459 - P-Channel 30-V (D-S) MOSFET (Freescale)
  • AO4459 - P-Channel MOSFET (UMW)
  • AO4401 - P-Channel MOSFET (Freescale)
  • AO4402 - N-Channel MOSFET (Freescale)
  • AO4403 - P-Channel MOSFET (Freescale)
Other Datasheets by Alpha & Omega Semiconductors
  • AO4450 - 40V N-Channel MOSFET
  • AO4451 - P-Channel MOSFET
  • AO4452 - 100V N-Channel MOSFET
  • AO4453 - 12V P-Channel MOSFET
  • AO4454 - 100V N-Channel MOSFET
  • AO4455 - 30V P-Channel MOSFET
  • AO4458 - N-Channel Enhancement Mode Field Effect Transistor
  • AO4459 - 30V P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is www.DataSheet4U.com suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications). AO4456 is a Green Product ordering option. AO4456 and AO4456 are electrically identical. Features VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.
Published: |