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AO4452 - 100V N-Channel MOSFET

General Description

The AO4452 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

Key Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 8A < 25mΩ < 31mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junct.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AO4450 40V N-Channel MOSFET
AO4454 100V N-Channel MOSFET
AO4456 N-Channel 30-V (D-S) MOSFET
AO4458 N-Channel 30-V (D-S) MOSFET
AO4459 P-Channel 30-V (D-S) MOSFET

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AO4452 100V N-Channel MOSFET General Description The AO4452 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 8A < 25mΩ < 31mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.