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AO4454 - 100V N-Channel MOSFET

Datasheet Summary

Description

The AO4454 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behaviar.

This universal technology is well suited for PWM, load switching and general purpose applications.

Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 6.5A < 36mΩ < 43mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B C TA=70° Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to.

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Datasheet Details

Part number AO4454
Manufacturer Freescale
File Size 472.46 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet AO4454 Datasheet
Additional preview pages of the AO4454 datasheet.

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AO4454 100V N-Channel MOSFET General Description The AO4454 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 6.5A < 36mΩ < 43mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.
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