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AO4458 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4458/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is ESD protected and it is suitable for use as a load switch or in PWM applications.

AO4458 and AO4458L are electrically identical.

Key Features

  • VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) D S S S G D D D D S G SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G B Units V V TA=25°C TA=70°C ID IDM IAR EAR PD TJ, TSTG TA=25°C TA=70°C 20 17 80 50 375 3.1 2.0 -55.

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Full PDF Text Transcription (Reference)

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AO4458 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4458/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4458 and AO4458L are electrically identical. -RoHs Compliant -AO4458L is Halogen Free Features VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) D S S S G D D D D S G SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.