Datasheet4U Logo Datasheet4U.com

AO4485 - 40V P-Channel MOSFET

Datasheet Summary

Description

The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a DC-DC converter application.

📥 Download Datasheet

Datasheet preview – AO4485

Datasheet Details

Part number AO4485
Manufacturer Alpha & Omega Semiconductors
File Size 363.00 KB
Description 40V P-Channel MOSFET
Datasheet download datasheet AO4485 Datasheet
Additional preview pages of the AO4485 datasheet.

📁 Similar Datasheet

  • AO4485 - P-Channel MOSFET (Kexin)
  • AO4485 - P-Channel MOSFET (Freescale)
  • AO4480 - 40V N-Channel Enhancement Mode MOSFET (MAOYUAN)
  • AO4480 - 40V N-ChanneI MOSFET (UMW)
  • AO4482 - N-Channel MOSFET (Freescale)
  • AO4482 - N-Channel MOSFET (Kexin)
  • AO4484 - N-Channel MOSFET (Kexin)
  • AO4401 - P-Channel MOSFET (Freescale)
  • AO4402 - N-Channel MOSFET (Freescale)
  • AO4403 - P-Channel MOSFET (Freescale)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AO4485 40V P-Channel MOSFET General Description The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Product Summary VDS (V) = -40V ID = -10A RDS(ON) < 15mΩ RDS(ON) < 20mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.3mH G EAR -12 -10 -9 -8 -120 -28 118 Power Dissipation A TA=25°C TA=70°C 3.
Published: |