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AO4485 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-40V.
  • ID =-10 A (VGS =-10V).
  • RDS(ON) ＜ 15mΩ (VGS =-10V).
  • RDS(ON) ＜ 20mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 D MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25°C TA=70°C Repetitive avalanche energy Power Dissipation Thermal Resistance. Junction- to-.

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SMD Type P-Channel MOSFET AO4485 (KO4485) ■ Features ● VDS (V) =-40V ● ID =-10 A (VGS =-10V) ● RDS(ON) ＜ 15mΩ (VGS =-10V) ● RDS(ON) ＜ 20mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 D MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25°C TA=70°C Repetitive avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range L=0.3mH TA=25°C TA=70°C Symbol VDS VGS ID IDM IAR EAR PD RthJA RthJC TJ Tstg 10 Sec Steady State -40 ±20 -12 -10 -9 -8 -120 -28 118 3.1 1.7 2 1.