AO4488 Datasheet | Alpha & Omega Semiconductors

Description The AO4488/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. .. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4488 and AO4488L are electrically identical. -Ro HS pliant -AO4488L is Halogen Free Features VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) D D D D G SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3m H Power Dissipation Units V V TA=25°C TA=70°C ID IDM IAR EAR PD TJ, TSTG TA=25°C TA=70°C 20 17 80 50 375 3.1 2.0 -55 to 150 15 12 A m J 1.7 1.1 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. .aosmd. Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID = 250µA, VGS = 0V VDS = 30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±16V VDS = VGS ID = 250µA VGS = 10V, VDS = 5V VGS = 10V, ID = 20A Static Drain-Source On-Resistance VGS = 4.5V, ID = 18A g FS VSD IS Forward Transconductance VDS = 5V, ID = 20A IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1.0 80 3.8 5.3 5.2 72 0.69 1 3 5450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 760 540 1 84 VGS=10V, VDS=15V, ID=20A 42 12 21 13 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, d I/dt=100A/µs Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 ±10 1.7 3 4.6...