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AO4488 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 20 A (VGS = 10V).
  • RDS(ON) ＜ 4.6mΩ (VGS = 10V).
  • RDS(ON) ＜ 6.4mΩ (VGS = 4.5V).
  • ESD Rating: 2KV HBM +0.04 0.21 -0.02 SOP-8 D G S MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Therm.

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SMD Type N-Channel MOSFET AO4488 (KO4488) ■ Features ● VDS (V) = 30V ● ID = 20 A (VGS = 10V) ● RDS(ON) ＜ 4.6mΩ (VGS = 10V) ● RDS(ON) ＜ 6.4mΩ (VGS = 4.5V) ● ESD Rating: 2KV HBM +0.04 0.21 -0.02 SOP-8 D G S MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.3mH TA=25℃ TA=70℃ Symbol VDS VGS ID IDM IAR EAR PD RthJA RthJL TJ Tstg 10 Sec Steady State 30 ±20 20 15 17 12 80 50 375 3.1 1.