Datasheet Details
| Part number | AO4568 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.63 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet | AO4568-AlphaOmegaSemiconductors.pdf |
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Overview: AO4568 30V N-Channel AlphaMOS General.
| Part number | AO4568 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.63 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet | AO4568-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 12A < 11.5mΩ < 17.5mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S Orderable Part Number AO4568 Package Type SO-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 10µs VSPIKE TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 42 70 Maximum Junction-to-Lead Steady-State RθJL 20 G S Form Tape & Reel Minimum Order Quantity 3000 Maximum 30 ±20 12 9.4 48 13 8 36 2.5 1.6 -55 to 150 Units V V A A mJ V W °C Max Units 50 °C/W 85 °C/W 30 °C/W Rev.1.0: February 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=12A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse
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