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AO4803 - Dual P-Channel MOSFET

General Description

The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO4803 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 www. DataSheet4U. com G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG.

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📁 Similar Datasheet

Part Number Description Manufacturer
AO4803A Dual P-Channel MOSFET Kexin
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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4803A 30V Dual P-Channel MOSFET
AO4800 30V Dual N-Channel MOSFET
AO4800B 30V Dual N-Channel MOSFET
AO4800BL Dual N-Channel MOSFET
AO4801 Dual P-Channel MOSFET

Full PDF Text Transcription (Reference)

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AO4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4803 is Pb-free (meets ROHS & Sony 259 specifications). AO4803L is a Green Product ordering option. AO4803 and AO4803L are electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 www.DataSheet4U.