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AO4812A - Dual N-Channel MOSFET

Datasheet Summary

Description

The AO4812A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

AO4812A is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www. DataSheet4U. com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 6.9 5.8 30 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Juncti.

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Datasheet Details

Part number AO4812A
Manufacturer Alpha & Omega Semiconductors
File Size 135.09 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO4812A Datasheet
Additional preview pages of the AO4812A datasheet.

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Full PDF Text Transcription

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AO4812A Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4812A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4812AL is a Green Product ordering option. AO4812A and AO4812AL are electrically identical. Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www.DataSheet4U.
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