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AO5404E - N-Channel MOSFET

Description

The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

AO5404E and AO5404EL are electrically identical.

Features

  • VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55 Ω (VGS = 4.5V) RDS(ON) < 0.68 Ω (VGS = 2.5V) RDS(ON) < 0.80 Ω (VGS = 1.8V) ESD.

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📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

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AO5600E Complementary Enhancement Mode Field Effect Transistor
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5404E and AO5404EL are electrically identical. -RoHS compliant -AO5404EL is Halogen Free Features VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS(ON) < 0.55 Ω (VGS = 4.5V) RDS(ON) < 0.68 Ω (VGS = 2.5V) RDS(ON) < 0.80 Ω (VGS = 1.
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