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AO5600E - Complementary Enhancement Mode Field Effect Transistor

Description

The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical.

ESD PROTECTED!

Features

  • n-channel VDS (V) = 20V, ID = 0.6A (VGS=4.5V) RDS(ON)< 0.65Ω (VGS= 4.5V) RDS(ON)< 0.75Ω (VGS= 2.5V) RDS(ON)< 0.95Ω (VGS= 1.8V) p-channel VDS (V) = -20V, ID = -0.5A (VGS=-4.5V) RDS(ON)< 0.8Ω (VGS= -4.5V) RDS(ON)< 1.0Ω (VGS= -2.5V) RDS(ON)< 1.3Ω (VGS= -1.8V) S1 G1 D2 SC-89-6 D1 G2 S2 D1 1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±8 Continuous Drain TC=25°C 0.

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📁 Similar Datasheet

Part Number Description Manufacturer
AO5600E N- & P-Channel 20V MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO5404E N-Channel MOSFET
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor

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AO5600E Complementary Enhancement Mode Field Effect Transistor General Description The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS compliant -AO5600EL is Halogen Free ESD PROTECTED! Features n-channel VDS (V) = 20V, ID = 0.6A (VGS=4.5V) RDS(ON)< 0.65Ω (VGS= 4.5V) RDS(ON)< 0.75Ω (VGS= 2.5V) RDS(ON)< 0.95Ω (VGS= 1.8V) p-channel VDS (V) = -20V, ID = -0.5A (VGS=-4.5V) RDS(ON)< 0.8Ω (VGS= -4.5V) RDS(ON)< 1.0Ω (VGS= -2.5V) RDS(ON)< 1.3Ω (VGS= -1.
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