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AO6405 - 30V P-Channel MOSFET

General Description

The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO6400 30V N-Channel MOSFET
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AO6401A P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO6405 30V P-Channel MOSFET General Description The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) -30V -5A < 52mW < 87mW TSOP6 Top View Bottom View Top View D1 6 D D2 5 D G 3 4 S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -5 -4.2 -20 2 1.