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AO8807 - Dual P-Channel FET

Datasheet Summary

Description

The AO8807 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch.

AO8807 and AO8807L are electrically identical.

Features

  • VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) ESD Protected! D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 ±8 -6.5 -5 -60 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA.

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Datasheet preview – AO8807

Datasheet Details

Part number AO8807
Manufacturer Alpha & Omega Semiconductors
File Size 181.35 KB
Description Dual P-Channel FET
Datasheet download datasheet AO8807 Datasheet
Additional preview pages of the AO8807 datasheet.

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Full PDF Text Transcription

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AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8807 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. - RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) ESD Protected! D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 ±8 -6.
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