AO8807 Datasheet | Freescale Semiconductor

Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8807 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. - RoHS pliant -Halogen Free Features VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg D2 G1 G2 S1 S2...