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AO8807 - Dual P-Channel FET

General Description

The AO8807 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch.

AO8807 and AO8807L are electrically identical.

Key Features

  • VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 ±8 -6.5 -5 -60 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AO8807L P-Channel MOSFET
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AO8801A P-Channel MOSFET
AO8802 Dual N-Channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8807 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. - RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 ±8 -6.5 -5 -60 1.4 0.