| Part number | AO8806 |
|---|---|
| Datasheet | AO8806_FreesCale.pdf |
| File Size | 268.08 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | Dual N-Channel FET |
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mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8806 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its mon- drain configuration.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ETC | AO8806 | Dual N-Channel MOSFET | ETC |
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| AO8800 | Dual N-Channel FET |
| AO8801 | Dual P-Channel FET |
| AO8801A | P-Channel MOSFET |
| AO8802 | Dual N-Channel FET |
| AO8803 | P-Channel MOSFET |
| AO8804 | Dual N-Channel FET |
| AO8807 | Dual P-Channel FET |
| AO8807L | P-Channel MOSFET |
| AO8808 | Dual N-Channel FET |
