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AO8806 - Dual N-Channel FET

General Description

The AO8806 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V.

Key Features

  • VDS (V) = 20V ID = 6 A RDS(ON) < 25mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) RDS(ON) < 40mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 G2 S2 D1 D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 6.4 5.4 30 1.5 1.08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C.

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📁 Similar Datasheet

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AO8800 Dual N-Channel FET
AO8801 Dual P-Channel FET
AO8801A P-Channel MOSFET
AO8802 Dual N-Channel FET
AO8803 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO8806 General Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8806 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common- drain configuration. Features VDS (V) = 20V ID = 6 A RDS(ON) < 25mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) RDS(ON) < 40mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 G2 S2 D1 D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 6.4 5.4 30 1.5 1.