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AO8806 - Dual N-Channel MOSFET

General Description

The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration.

Key Features

  • VDS (V) = 20V ID = 6 A RDS(ON) < 25mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) RDS(ON) < 40mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 6.4 5.4 30 1.5 1.08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °.

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Datasheet Details

Part number AO8806
Manufacturer Unknown Manufacturer
File Size 231.29 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO8806 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dec 2002 AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration. Features VDS (V) = 20V ID = 6 A RDS(ON) < 25mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) RDS(ON) < 40mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 6.4 5.4 30 1.5 1.