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AO8803 Datasheet Dual P-channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: .. AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Key Features

  • VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -12 ±8 -7 -5.8 -20 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°.

AO8803 Distributor