Datasheet4U Logo Datasheet4U.com

AO8802 - Dual N-Channel MOSFET

General Description

The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Key Features

  • VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.5 1.08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°.

📥 Download Datasheet

Datasheet Details

Part number AO8802
Manufacturer Unknown Manufacturer
File Size 353.18 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO8802 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO8802 Dual N-Channel FET FreesCale
AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ALPHA
AO8800 Dual N-Channel FET FreesCale
AO8801 Dual P-Channel MOSFET VBsemi
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

Other Datasheets by Unknown Manufacturer

Part Number Description
AO8804 Dual N-Channel MOSFET
AO8806 Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.