AO8802 - Dual N-Channel MOSFET

Product Overview

Datasheet Details

Part number	AO8802
Manufacturer	ETC
File Size	353.18 KB
Description	Dual N-Channel MOSFET
Datasheet	AO8802 Datasheet
Additional preview pages of the AO8802 datasheet.

Product details

Description

The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.5 1.08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°.

📁 Similar Datasheet

AO8802 - Dual N-Channel FET (FreesCale)
AO8800 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (ALPHA)
AO8800 - Dual N-Channel FET (FreesCale)
AO8801 - Dual P-Channel MOSFET (VBsemi)
AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor (Alpha & Omega Semiconductors)
AO8801 - Dual P-Channel FET (FreesCale)
AO8801A - P-Channel MOSFET (FreesCale)
AO8801A - 20V P-Channel MOSFET (Alpha & Omega Semiconductors)

Other Datasheets by ETC

AO8804 - Dual N-Channel MOSFET
AO8806 - Dual N-Channel MOSFET

Published: Mar 26, 2005 |