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AO8802 - Dual N-Channel MOSFET

Datasheet Summary

Description

The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

  • VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.5 1.08 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°.

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Datasheet Details

Part number AO8802
Manufacturer ETC
File Size 353.18 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO8802 Datasheet
Additional preview pages of the AO8802 datasheet.

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Full PDF Text Transcription

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August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.
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