AO8804 - Dual N-Channel MOSFET

Product Overview

Datasheet Details

Part number	AO8804
Manufacturer	ETC
File Size	379.51 KB
Description	Dual N-Channel MOSFET
Datasheet	AO8804 Datasheet
Additional preview pages of the AO8804 datasheet.

Product details

Description

The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.5 1.08 -55 to 150 Units V V A TA=25°C.

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Other Datasheets by ETC

AO8802 - Dual N-Channel MOSFET
AO8806 - Dual N-Channel MOSFET

Published: Mar 26, 2005 |