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AO8804 - Dual N-Channel FET

General Description

The AO8804 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Key Features

  • VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.5 1.08 -55 to 150 Units V V A TA=25°C TA.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AO8800 Dual N-Channel FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO8804 General Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8804 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Features VDS (V) = 20V ID = 8A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.