AO8800 Datasheet | Freescale Semiconductor

General Description mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8800 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration. Features VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2...