AO8800 Description
mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8800 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.