AO8800 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

ALPHA

Datasheet Details

Part number	AO8800
Manufacturer	ALPHA
File Size	226.44 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8800 Datasheet
Additional preview pages of the AO8800 datasheet.

Product details

Description

The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±12 Continuous Drain TA=25°C 6.4 A Current TA=70°C 5.4 ID Pulsed Drain Current B TA=25°C A Power Dissipation TA=70°C Junction and Storage Temperat.

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Published: May 1, 2005 |