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AO8800 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Key Features

  • VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±12 Continuous Drain TA=25°C 6.4 A Current TA=70°C 5.4 ID Pulsed Drain Current B TA=25°C A Power Dissipation TA=70°C Junction and Storage Temperat.

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Datasheet Details

Part number AO8800
Manufacturer ALPHA
File Size 226.44 KB
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO8800 Datasheet

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July 2001 AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.