• Part: AO8800
  • Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: ALPHA
  • Size: 226.44 KB
Download AO8800 Datasheet PDF
ALPHA
AO8800
AO8800 is Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor manufactured by ALPHA.
July 2001 AO8800 mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration. Features VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1 D1 D2 G2...