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AO8808 - Dual N-Channel FET

Datasheet Summary

Description

The AO8808 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating.

Features

  • VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 S2 D1 D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C.

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Datasheet preview – AO8808

Datasheet Details

Part number AO8808
Manufacturer FreesCale
File Size 201.46 KB
Description Dual N-Channel FET
Datasheet download datasheet AO8808 Datasheet
Additional preview pages of the AO8808 datasheet.

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Full PDF Text Transcription

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AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8808 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8808 is Pb-free (meets ROHS & Sony 259 specifications). AO8808L is a Green Product ordering option. AO8808 and AO8808L are electrically identical. Features VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.
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