Datasheet Details
| Part number | AOB20B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 564.15 KB |
| Description | IGBT |
| Datasheet | AOB20B65M1-AlphaOmegaSemiconductors.pdf |
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Overview: AOK20B65M1/AOT20B65M1/AOB20B65M1 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode.
| Part number | AOB20B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 564.15 KB |
| Description | IGBT |
| Datasheet | AOB20B65M1-AlphaOmegaSemiconductors.pdf |
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• Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor Drives • Sewing Machines • Home Appliances • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-247 TO-220 Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) TO-263 D2PAK C 650V 20A 1.7V C E C G AOK20B65M1 E GC AOT20B65M1 E G AOB20B65M1 G E Orderable Part Number Package Type Form Minimum Order Quantity AOK20B65M1 TO247 Tube 240 AOT20B65M1 TO220 Tube 1000 AOB20B65M1 TO263 Tape & Reel 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOK20B65M1/AOT(B)20B65M1 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 40 A 20 Pulsed Collector Current, Limited by TJmax I CM 60 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 60 A Continuous Diode Forward Current TC=25°C TC=100°C IF 40 A 20 Diode Pulsed Current, Limited by TJmax I FM 60 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs Power Dissipation TC=25°C TC=100°C PD 227 114 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOK20B65M1 AOT(B)20B65M1 Units Maximum Junction-to-Ambient R θ JA 40 65 Maximum IGBT Junction-to-Case R θ JC 0.66 Maximum Diode Junction-to-Case R θ JC 1.5 1) Allowed number of short circuits: <1000;
time between short circuits: >1s.
°C/W °C/W °C/W Rev.3.0: May 2016 www.aosmd.com Page 1 of
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|---|---|
| AOB20S60 | Power Transistor |
| AOB20S60L | Power Transistor |
| AOB210L | 30V N-Channel MOSFET |
| AOB2140L | 40V N-Channel MOSFET |
| AOB2144L | 40V N-Channel MOSFET |
| AOB2146L | 40V N-Channel MOSFET |
| AOB240L | 40V N-Channel MOSFET |
| AOB2500L | N-Channel MOSFET |
| AOB2502L | 150V N-Channel MOSFET |
| AOB254L | 150V N-Channel MOSFET |