Datasheet Details
| Part number | AOB2140L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 373.10 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOB2140L-AlphaOmegaSemiconductors.pdf |
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Overview: AOT2140L/AOB2140L 40V N-Channel AlphaSGT TM General.
| Part number | AOB2140L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 373.10 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOB2140L-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized Ruggedness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 195A < 1.5mΩ < 2mΩ Applications • DC Motor Driver • Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested Top View D TO220 Bottom View D Top View D TO-263 D2PAK Bottom View D D GD S AOT2140L Orderable Part Number AOT2140L AOB2140L S DG S G AOB2140L Package Type TO-220 TO-263 Form Tube Tape & Reel G S G S Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 195 195 1000 57 45.5 70 735 272 136 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 50 0.42 Max 15 60 0.55 Units °C/W °C/W °C/W Rev.1.0: September 2017 www.aosmd.com Page 1 of 6 AOT2140L/AOB2140L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=40V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maxi
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|---|---|---|---|
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