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AOB27S60 - Power Transistor

General Description

The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

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AOT27S60/AOB27S60/AOTF27S60 600V 27A α MOS TM Power Transistor General Description The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 110A 0.