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AOB414L - N-Channel MOSFET

Datasheet Summary

Description

The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

This device is ideally suited for use as a low side switch in CPU core power conversion.

AOB414L ( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 110A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 4.8mΩ (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,G TC=25°C G TC=100°C B ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C.

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Datasheet Details

Part number AOB414L
Manufacturer Alpha & Omega Semiconductors
File Size 109.93 KB
Description N-Channel MOSFET
Datasheet download datasheet AOB414L Datasheet
Additional preview pages of the AOB414L datasheet.

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Full PDF Text Transcription

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Rev 2: Nov. 2004 AOB414, AOB414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOB414L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 110A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 4.8mΩ (VGS = 4.
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