Datasheet Details
| Part number | AOB414L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 109.93 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOB414L Datasheet
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General Description
The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.
This device is ideally suited for use as a low side switch in CPU core power conversion.
AOB414L ( Green Product ) is offered in a lead-free package.
Key Features
- VDS (V) = 30V ID = 110A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 4.8mΩ (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,G TC=25°C G TC=100°C B ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C.