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AOB411L - P-Channel MOSFET

Datasheet Summary

Features

  • Drain Current.
  • ID= -78A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 16.5mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number AOB411L
Manufacturer INCHANGE
File Size 232.48 KB
Description P-Channel MOSFET
Datasheet download datasheet AOB411L Datasheet
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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor AOB411L ·FEATURES ·Drain Current –ID= -78A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -78 A IDM Drain Current-Single Pulsed -230 A PD Total Dissipation @TC=25℃ 187 W Tj Max.
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